Terahertz Frequency Comb in Graphene Field-Effect Transistors
نویسندگان
چکیده
منابع مشابه
Graphene field-effect transistors as room-temperature terahertz detectors.
The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very pro...
متن کاملTunable terahertz frequency comb generation using time-dependent graphene sheets
Vincent Ginis,1 Philippe Tassin,2,* Thomas Koschny,3 and Costas M. Soukoulis3,4 1Applied Physics Research Group (APHY), Vrije Universiteit Brussel, Pleinlaan 2, B-1050 Brussel, Belgium 2Department of Applied Physics, Chalmers University, SE-412 96 Göteborg, Sweden 3Ames Laboratory—U.S. DOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA 4Institute of Electr...
متن کاملFrequency Response of Graphene Electrolyte-Gated Field-Effect Transistors
This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive...
متن کاملEnergy dissipation in graphene field-effect transistors.
We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 kW cm(-2) of dissipated electric power. The metallic contacts act as heat sinks, but not in a dominant fashion. To explain the observed temperature profile and he...
متن کاملHysteresis modeling in graphene field effect transistors
Graphene field effect transistors with an Al2O3 gate dielectric are fabricated on H-intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour deposition. DC measurements of the gate voltage vg versus the drain current id reveal a severe hysteresis of clockwise orientation. A capacitive model is used to derive the relationship between the applied gate voltage and the Fermi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: EPJ Web of Conferences
سال: 2020
ISSN: 2100-014X
DOI: 10.1051/epjconf/202023303006